2SC3657 transistors equivalent, silicon npn power transistors.
*Switching regulator and high voltage switching applications
*High speed DC-DC converter applications.
ABSOLUTE.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching regulator and high voltage switching ap.
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